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| Voltage | 220-240 V |
| Part Number | IRFR9024NTR |
| Transistor Type | NPN |
| Mounting Type | SMD |
| Current | 10 A |
| Country of Origin | Made in India |
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| Brand | STMicroelectronics |
| Transistor Type | NPN |
| Product Category | MOSFET |
| Mounting | Through Hole |
| Package | TO-220-3 |
| Configuration | Single |
| Manufacturer: | STMicroelectronics | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-220-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Id - Continuous Drain Current: | 35 A | |
| Rds On - Drain-Source Resistance: | 38 mOhms | |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | |
| Qg - Gate Charge: | 55 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 175 C | |
| Pd - Power Dissipation: | 115 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | STMicroelectronics | |
| Configuration: | Single | |
| Fall Time: | 10 ns | |
| Forward Transconductance - Min: | 10 S | |
| Height: | 9.15 mm | |
| Length: | 10.4 mm | |
| Product Type: | MOSFET | |
| Rise Time: | 40 ns | |
| Series: | STP30NF10 | |
| Factory Pack Quantity: | 1000 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Type: | MOSFET | |
| Typical Turn-Off Delay Time: | 45 ns | |
| Typical Turn-On Delay Time: | 15 ns | |
| Width: | 4.6 mm | |
| Unit Weight: | 2 g |
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| Brand | onsemi |
| Product | MOSFET |
| Package | TO-3PN-3 |
| Mounting | Through Hole |
| Series | FDA59N30 |
| Weight | 4.600 g |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | onsemi | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-3PN-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 300 V | |
| Id - Continuous Drain Current: | 59 A | |
| Rds On - Drain-Source Resistance: | 56 mOhms | |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Qg - Gate Charge: | 100 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 500 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | onsemi / Fairchild | |
| Configuration: | Single | |
| Fall Time: | 200 ns | |
| Height: | 20.1 mm | |
| Length: | 16.2 mm | |
| Product Type: | MOSFET | |
| Rise Time: | 575 ns | |
| Series: | FDA59N30 | |
| Factory Pack Quantity: | 450 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 120 ns | |
| Typical Turn-On Delay Time: | 140 ns | |
| Width: | 5 mm | |
| Part # Aliases: | FDA59N30_NL | |
| Unit Weight: | 4.600 g |
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| Manufacturer | Power Integrations |
| Product | AC/DC Converters |
| Mounting | Through Hole |
| Package | TO-220 |
| Series | TOP244 |
| Manufacturer: | Power Integrations | |
| Product Category: | AC/DC Converters | |
| RoHS: | Details | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-220 | |
| Output Voltage: | 12 V | |
| Input / Supply Voltage - Min: | 85 VAC | |
| Input / Supply Voltage - Max: | 265 VAC | |
| Switching Frequency: | 132 kHz | |
| Duty Cycle - Max: | 83 % | |
| Operating Supply Current: | 1.6 mA | |
| Minimum Operating Temperature: | - 40 C | |
| Maximum Operating Temperature: | + 150 C | |
| Series: | TOP244 | |
| Packaging: | Tube | |
| Brand: | Power Integrations | |
| Product Type: | AC/DC Converters | |
| Factory Pack Quantity: | 50 | |
| Subcategory: | PMIC - Power Management ICs | |
| Tradename: | TopSwitch | |
| Type: | Off Line Converter | |
| Unit Weight: | 2.300 g |
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| Memory Size | 2 Kbit |
| Number Of Pins | 14 Pins |
| Brand | SEEQ |
| Product Category | IC Chips |
| Color | Black |
| Series | DQ2817A |
| Attribute | Attribute Value |
|---|---|
| Manufacturer: | SEEQ |
| Product Category: | IC Chips |
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| Brand | Toshiba |
| Mounting Type | SMD |
| Product Category | MOSFET |
| Package | SOT-23F-3 |
| Transistor Type | 1 P-Channel |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | Toshiba | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | SMD/SMT | |
| Package/Case: | SOT-23F-3 | |
| Transistor Polarity: | P-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 20 V | |
| Id - Continuous Drain Current: | 6 A | |
| Rds On - Drain-Source Resistance: | 88.4 mOhms | |
| Vgs - Gate-Source Voltage: | - 8 V, + 8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | |
| Qg - Gate Charge: | 12.8 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 1 W | |
| Channel Mode: | Enhancement | |
| Tradename: | U-MOSVI | |
| Packaging: | Reel | |
| Packaging: | Cut Tape | |
| Packaging: | MouseReel | |
| Brand: | Toshiba | |
| Configuration: | Single | |
| Forward Transconductance - Min: | 4.5 S | |
| Height: | 0.9 mm | |
| Length: | 2.9 mm | |
| Product Type: | MOSFET | |
| Series: | SSM3J328 | |
| Factory Pack Quantity: | 3000 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 P-Channel | |
| Typical Turn-Off Delay Time: | 107 ns | |
| Typical Turn-On Delay Time: | 32 ns | |
| Width: | 1.3 mm | |
| Unit Weight: | 11 mg |
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| Manufacturer | onsemi |
| Product | Diodes |
| Mounting | Through Hole |
| Package | DO-35 |
| Series | 1N4148 |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | onsemi | |
| Product Category: | Diodes - General Purpose, Power, Switching | |
| RoHS: | Details | |
| Mounting Style: | Through Hole | |
| Package/Case: | DO-35 | |
| Peak Reverse Voltage: | 100 V | |
| Max Surge Current: | 4 A | |
| If - Forward Current: | 0.3 A | |
| Configuration: | Single | |
| Recovery Time: | 4 ns | |
| Vf - Forward Voltage: | 1 V | |
| Ir - Reverse Current: | 5 uA | |
| Minimum Operating Temperature: | - 65 C | |
| Maximum Operating Temperature: | + 175 C | |
| Series: | 1N4148 | |
| Packaging: | Bulk | |
| Brand: | onsemi / Fairchild | |
| Height: | 1.91 mm | |
| Length: | 4.56 mm | |
| Product Type: | Diodes - General Purpose, Power, Switching | |
| Factory Pack Quantity: | 5000 | |
| Subcategory: | Diodes & Rectifiers | |
| Type: | Small Signal Switching Diode | |
| Vr - Reverse Voltage: | 100 V | |
| Width: | 1.91 mm | |
| Part # Aliases: | 1N4148_NL | |
| Unit Weight: | 125 mg |
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| Brand | Infineon |
| Mounting Style | Through Hole |
| Package | TO-220-3 |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Product Type | MOSFET |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | Infineon | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-220-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Id - Continuous Drain Current: | 57 A | |
| Rds On - Drain-Source Resistance: | 23 mOhms | |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 4 V | |
| Qg - Gate Charge: | 86.7 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 175 C | |
| Pd - Power Dissipation: | 200 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | Infineon / IR | |
| Configuration: | Single | |
| Height: | 15.65 mm | |
| Length: | 10 mm | |
| Product Type: | MOSFET | |
| Factory Pack Quantity: | 50 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Width: | 4.4 mm | |
| Part # Aliases: | IRF3710PBF SP001551058 | |
| Unit Weight: | 2 g |
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| Brand | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT |
| Mounting Style | SMD/SMT |
| Package | SOT-32-3 |
| Transistor Polarity | NPN |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | STMicroelectronics | |
| Product Category: | Bipolar Transistors - BJT | |
| RoHS: | Details | |
| Mounting Style: | SMD/SMT | |
| Package/Case: | SOT-32-3 | |
| Transistor Polarity: | NPN | |
| Configuration: | Single | |
| Collector- Emitter Voltage VCEO Max: | 30 V | |
| Collector- Base Voltage VCBO: | 60 V | |
| Emitter- Base Voltage VEBO: | 5 V | |
| Maximum DC Collector Current: | 3 A | |
| Pd - Power Dissipation: | 12500 mW | |
| Gain Bandwidth Product fT: | 100 MHz | |
| Minimum Operating Temperature: | - 65 C | |
| Maximum Operating Temperature: | + 150 C | |
| Series: | 2SD882 | |
| Packaging: | Tube | |
| Brand: | STMicroelectronics | |
| Height: | 10.8 mm | |
| Length: | 7.8 mm | |
| Product Type: | BJTs - Bipolar Transistors | |
| Factory Pack Quantity: | 2000 | |
| Subcategory: | Transistors | |
| Technology: | Si | |
| Width: | 2.7 mm | |
| Unit Weight: | 60 mg |
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| Channel Type | N Channel |
| Brand | Infineon |
| Transistor Type | NPN |
| Mounting Type | Through Hole |
| Product Category | MOSFET |
| Package | TO-220-3 |
| Weight | 2 g |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | Infineon | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-220-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Id - Continuous Drain Current: | 57 A | |
| Rds On - Drain-Source Resistance: | 23 mOhms | |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 4 V | |
| Qg - Gate Charge: | 86.7 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 175 C | |
| Pd - Power Dissipation: | 200 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | Infineon / IR | |
| Configuration: | Single | |
| Height: | 15.65 mm | |
| Length: | 10 mm | |
| Product Type: | MOSFET | |
| Factory Pack Quantity: | 50 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Width: | 4.4 mm | |
| Part # Aliases: | IRF3710PBF SP001551058 | |
| Unit Weight: | 2 g |
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| Brand | STMicroelectronics |
| Mounting Type | Through Hole |
| Product | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Package | SOT-32-3 |
| Configuration | Single |
| Weight | 60 mg |
| Manufacturer: | STMicroelectronics | |
| Product Category: | Bipolar Transistors - BJT | |
| RoHS: | Details | |
| Mounting Style: | Through Hole | |
| Package/Case: | SOT-32-3 | |
| Transistor Polarity: | NPN | |
| Configuration: | Single | |
| Collector- Emitter Voltage VCEO Max: | 80 V | |
| Collector- Base Voltage VCBO: | 80 V | |
| Emitter- Base Voltage VEBO: | 5 V | |
| Collector-Emitter Saturation Voltage: | 0.5 V | |
| Maximum DC Collector Current: | 1.5 A | |
| Pd - Power Dissipation: | 12.5 W | |
| Minimum Operating Temperature: | - 65 C | |
| Maximum Operating Temperature: | + 150 C | |
| Series: | BD139 | |
| Packaging: | Tube | |
| Brand: | STMicroelectronics | |
| Continuous Collector Current: | 1.5 A | |
| DC Collector/Base Gain hFE Min: | 40 | |
| DC Current Gain hFE Max: | 250 | |
| Height: | 10.8 mm | |
| Length: | 7.8 mm | |
| Product Type: | BJTs - Bipolar Transistors | |
| Factory Pack Quantity: | 2000 | |
| Subcategory: | Transistors | |
| Technology: | Si | |
| Width: | 2.7 mm | |
| Unit Weight: | 60 mg |
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| Voltage | 6.3 V |
| Capacitance | 0.1 uF - 1.0 uF |
| Material | Aluminium |
| Usage/Application | HT |
| Warranty | 1 Year |
| Country of Origin | Made in India |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | AVX | |
| Product Category: | Tantalum Capacitors - Solid SMD | |
| RoHS: | Details | |
| Packaging: | Reel | |
| Packaging: | Cut Tape | |
| Packaging: | MouseReel | |
| Series: | TAJ | |
| Capacitance: | 1 uF | |
| Voltage Rating DC: | 16 VDC | |
| Tolerance: | 10 % | |
| Case Code - in: | 1206 | |
| Case Code - mm: | 3216 | |
| Mfr Case Code: | A Case | |
| Height: | 1.6 mm | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 125 C | |
| Termination Style: | SMD/SMT | |
| Brand: | AVX | |
| Capacitance - nF: | 1000 nF | |
| Length: | 3.2 mm | |
| Package/Case: | 1206 (3216 metric) | |
| Product: | Tantalum Solid Standard Grade - Other Various | |
| Product Type: | Tantalum Capacitors | |
| Factory Pack Quantity: | 2000 | |
| Subcategory: | Capacitors | |
| Type: | General Purpose SMT Chip Tantalum Capacitors | |
| Width: | 1.6 mm | |
| Unit Weight: | 27 mg |
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| Number Of Channels | 1 channel |
| Brand | Vishay |
| Product Category | High Speed Optocouplers |
| Data Rate | 10 Mb/s |
| Weight | 650.407 mg |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | Vishay | |
| Product Category: | High Speed Optocouplers | |
| RoHS: | Details | |
| Data Rate: | 10 Mb/s | |
| Number of Channels: | 1 Channel | |
| Output Type: | Photo IC | |
| Isolation Voltage: | 5000 Vrms | |
| Vf - Forward Voltage: | 1.35 V | |
| If - Forward Current: | 10 mA | |
| Vr - Reverse Voltage: | 5 V | |
| Minimum Operating Temperature: | - 40 C | |
| Maximum Operating Temperature: | + 85 C | |
| Packaging: | Reel | |
| Packaging: | Cut Tape | |
| Packaging: | MouseReel | |
| Brand: | Vishay Semiconductors | |
| Maximum Collector Current: | 50 mA | |
| Output Current: | 50 mA | |
| Product Type: | High Speed Optocouplers | |
| Factory Pack Quantity: | 1000 | |
| Subcategory: | Optocouplers | |
| Unit Weight: | 650.407 mg |
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| Channel Type | P Channel |
| Part Number | 7N60 |
| Transistor Type | NPN |
| Mounting Type | SMD |
| Current | 30 A |
| Country of Origin | Made in India |
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| Channel Type | P Channel |
| Part Number | FDA59N30 |
| Maximum Gate Source Voltage | +-30V |
| Transistor Type | NPN |
| Current | 35A |
| Country of Origin | Made in India |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | onsemi | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-3PN-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 300 V | |
| Id - Continuous Drain Current: | 59 A | |
| Rds On - Drain-Source Resistance: | 56 mOhms | |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Qg - Gate Charge: | 100 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 500 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | onsemi / Fairchild | |
| Configuration: | Single | |
| Fall Time: | 200 ns | |
| Height: | 20.1 mm | |
| Length: | 16.2 mm | |
| Product Type: | MOSFET | |
| Rise Time: | 575 ns | |
| Series: | FDA59N30 | |
| Factory Pack Quantity: | 450 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 120 ns | |
| Typical Turn-On Delay Time: | 140 ns | |
| Width: | 5 mm | |
| Part # Aliases: | FDA59N30_NL | |
| Unit Weight: | 4.600 g |
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| Brand | onsemi |
| Transistor Type | NPN |
| Mounting Type | Through Hole |
| Product | MOSFET |
| Package | TO-3PN-3 |
| Series | FDA59N30 |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | onsemi | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-3PN-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 300 V | |
| Id - Continuous Drain Current: | 59 A | |
| Rds On - Drain-Source Resistance: | 56 mOhms | |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Qg - Gate Charge: | 100 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 500 W | |
| Channel Mode: | Enhancement | |
| Packaging: | Tube | |
| Brand: | onsemi / Fairchild | |
| Configuration: | Single | |
| Fall Time: | 200 ns | |
| Height: | 20.1 mm | |
| Length: | 16.2 mm | |
| Product Type: | MOSFET | |
| Rise Time: | 575 ns | |
| Series: | FDA59N30 | |
| Factory Pack Quantity: | 450 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 120 ns | |
| Typical Turn-On Delay Time: | 140 ns | |
| Width: | 5 mm | |
| Part # Aliases: | FDA59N30_NL | |
| Unit Weight: | 4.600 g |
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| Core Size | 8 Bit |
| RAM Size | 256 B |
| Part Number | TN2015H-6T |
| Mounting Type | SMD |
| Pin Count | 3 |
| Country of Origin | Made in India |
| Input Voltage | 12.5 V |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | STMicroelectronics | |
| Product Category: | SCRs | |
| RoHS: | Details | |
| Series: | TN2015H-6T | |
| Rated Repetitive Off-State Voltage VDRM: | 600 V | |
| Off-State Leakage Current @ VDRM IDRM: | 5 uA | |
| On-State RMS Current - It RMS: | 20 A | |
| Vf - Forward Voltage: | 1.6 V | |
| Gate Trigger Voltage - Vgt: | 1.3 V | |
| Gate Trigger Current - Igt: | 6 mA | |
| Minimum Operating Temperature: | - 40 C | |
| Maximum Operating Temperature: | + 150 C | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-220-3 | |
| Packaging: | Tube | |
| Brand: | STMicroelectronics | |
| Holding Current Ih Max: | 50 mA | |
| Product Type: | SCRs | |
| Factory Pack Quantity: | 1000 | |
| Subcategory: | Thyristors | |
| Unit Weight: | 6 g |
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| Channel Type | N Channel |
| Transistor Type | NPN |
| Current | 8mA |
| Voltage | 5 V |
| Country of Origin | Made in India |
| Series | TEA1062 |
| Product Type | MOSFET |
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| Channel Type | P Channel |
| Part Number | SUP70N06 |
| Maximum Gate Source Voltage | 30 A |
| Transistor Type | NPN |
| Mounting Type | SMD |
| Country of Origin | Made in India |
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Manufacturer: | Vishay | |
| Product Category: | MOSFET | |
| RoHS: | N | |
| Technology: | Si | |
| Tradename: | TrenchFET | |
| Packaging: | Tube | |
| Brand: | Vishay / Siliconix | |
| Product Type: | MOSFET | |
| Series: | SUP | |
| Factory Pack Quantity: | 50 | |
| Subcategory: | MOSFETs | |
| Unit Weight: | 2.240 g |
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| Channel Type | P Channel |
| Part Number | FQA11N90C |
| Maximum Gate Source Voltage | 30A |
| Transistor Type | NPN |
| Mounting Type | SMD |
| Country of Origin | Made in India |
| Manufacturer: | onsemi | |
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Technology: | Si | |
| Mounting Style: | Through Hole | |
| Package/Case: | TO-3PN-3 | |
| Transistor Polarity: | N-Channel | |
| Number of Channels: | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage: | 900 V | |
| Id - Continuous Drain Current: | 11 A | |
| Rds On - Drain-Source Resistance: | 1.4 Ohms | |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Qg - Gate Charge: | 80 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Pd - Power Dissipation: | 300 W | |
| Channel Mode: | Enhancement | |
| Tradename: | QFET | |
| Packaging: | Tube | |
| Brand: | onsemi / Fairchild | |
| Configuration: | Single | |
| Fall Time: | 85 ns | |
| Height: | 20.1 mm | |
| Length: | 16.2 mm | |
| Product Type: | MOSFET | |
| Rise Time: | 130 ns | |
| Series: | FQA11N90C_F109 | |
| Factory Pack Quantity: | 450 | |
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 130 ns | |
| Typical Turn-On Delay Time: | 60 ns | |
| Width: | 5 mm | |
| Part # Aliases: | FQA11N90C_F109 | |
| Unit Weight: | 4.600 g |
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