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Our range of products include bd139 stmicroelectronics ic, srps30nf10 power mosfet, fda59n30 power mosfet, irfr9024ntr ir mosfet, tn2015h-6t stmicroelectronics ic and top244y power integrations.
  • BD139 STMicroelectronics IC
  • BD139 STMicroelectronics IC
  • BD139 STMicroelectronics IC
BD139 STMicroelectronics IC

BD139 STMicroelectronics IC

Rs 49  / PieceGet Best Price
BrandSTMicroelectronics
Mounting TypeThrough Hole
PackageSOT-32-3
ProductBipolar Transistors - BJT
Weight60 mg
ConfigurationSingle
Transistor PolarityNPN
Manufacturer: STMicroelectronics
Product Category: Bipolar Transistors - BJT
RoHS:  Details
Mounting Style: Through Hole
Package/Case: SOT-32-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 80 V
Collector- Base Voltage VCBO: 80 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 1.5 A
Pd - Power Dissipation: 12.5 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: BD139
Packaging: Tube
Brand: STMicroelectronics
Continuous Collector Current: 1.5 A
DC Collector/Base Gain hFE Min: 40
DC Current Gain hFE Max: 250
Height: 10.8 mm
Length: 7.8 mm
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: Si
Width: 2.7 mm
Unit Weight: 60 mg

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  • SRPS30NF10 Power MOSFET
  • SRPS30NF10 Power MOSFET
  • SRPS30NF10 Power MOSFET
SRPS30NF10 Power MOSFET

SRPS30NF10 Power MOSFET

Rs 142  / PieceGet Best Price
BrandSTMicroelectronics
Transistor TypeNPN
Product CategoryMOSFET
MountingThrough Hole
PackageTO-220-3
ConfigurationSingle
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:   Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 35 A
Rds On - Drain-Source Resistance: 38 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 55 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 115 W
Channel Mode: Enhancement
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 10 ns
Forward Transconductance - Min: 10 S
Height: 9.15 mm
Length: 10.4 mm
Product Type: MOSFET
Rise Time: 40 ns
Series: STP30NF10
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 15 ns
Width: 4.6 mm
Unit Weight: 2 g

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  • Fda59n30 Power MOSFET
  • Fda59n30 Power MOSFET
  • Fda59n30 Power MOSFET
Fda59n30 Power MOSFET

Fda59n30 Power MOSFET

Rs 155  / PieceGet Best Price
Brandonsemi
ProductMOSFET
PackageTO-3PN-3
MountingThrough Hole
SeriesFDA59N30
Weight4.600 g
Product AttributeAttribute ValueSearch Similar
Manufacturer: onsemi
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Id - Continuous Drain Current: 59 A
Rds On - Drain-Source Resistance: 56 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 100 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 W
Channel Mode: Enhancement
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 200 ns
Height: 20.1 mm
Length: 16.2 mm
Product Type: MOSFET
Rise Time: 575 ns
Series: FDA59N30
Factory Pack Quantity: 450
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 120 ns
Typical Turn-On Delay Time: 140 ns
Width: 5 mm
Part # Aliases: FDA59N30_NL
Unit Weight: 4.600 g

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  • FDA59N30 Power MOSFET
  • FDA59N30 Power MOSFET
  • FDA59N30 Power MOSFET
FDA59N30 Power MOSFET

FDA59N30 Power MOSFET

Rs 155  / PieceGet Best Price
Brandonsemi
Transistor TypeNPN
Mounting TypeThrough Hole
ProductMOSFET
PackageTO-3PN-3
SeriesFDA59N30
Product AttributeAttribute ValueSearch Similar
Manufacturer: onsemi
Product Category: MOSFET
RoHS:   Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Id - Continuous Drain Current: 59 A
Rds On - Drain-Source Resistance: 56 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 100 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 W
Channel Mode: Enhancement
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 200 ns
Height: 20.1 mm
Length: 16.2 mm
Product Type: MOSFET
Rise Time: 575 ns
Series: FDA59N30
Factory Pack Quantity: 450
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 120 ns
Typical Turn-On Delay Time: 140 ns
Width: 5 mm
Part # Aliases: FDA59N30_NL
Unit Weight: 4.600 g

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  • IRFR9024NTR IR MOSFET
  • IRFR9024NTR IR MOSFET
  • IRFR9024NTR IR MOSFET
IRFR9024NTR IR MOSFET

IRFR9024NTR IR MOSFET

Rs 32  / PieceGet Best Price
Voltage220-240 V
Part NumberIRFR9024NTR
Transistor TypeNPN
Mounting TypeSMD
Current10 A
Country of OriginMade in India
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  • TN2015H-6T STMicroelectronics IC
  • TN2015H-6T STMicroelectronics IC
  • TN2015H-6T STMicroelectronics IC
TN2015H-6T STMicroelectronics IC

TN2015H-6T STMicroelectronics IC

Rs 80  / PieceGet Best Price
Core Size8 Bit
RAM Size256 B
Part NumberTN2015H-6T
Mounting TypeSMD
Pin Count3
Input Voltage12.5 V
Country of OriginMade in India
Product AttributeAttribute ValueSearch Similar
Manufacturer: STMicroelectronics
Product Category: SCRs
RoHS:   Details
Series: TN2015H-6T
Rated Repetitive Off-State Voltage VDRM: 600 V
Off-State Leakage Current @ VDRM IDRM: 5 uA
On-State RMS Current - It RMS: 20 A
Vf - Forward Voltage: 1.6 V
Gate Trigger Voltage - Vgt: 1.3 V
Gate Trigger Current - Igt: 6 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Brand: STMicroelectronics
Holding Current Ih Max: 50 mA
Product Type: SCRs
Factory Pack Quantity: 1000
Subcategory: Thyristors
Unit Weight: 6 g

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  • Top244Y Power Integrations
  • Top244Y Power Integrations
  • Top244Y Power Integrations
Top244Y Power Integrations

Top244Y Power Integrations

Rs 90  / PieceGet Best Price
ProductAC/DC Converters
MountingThrough Hole
PackageTO-220
SeriesTOP244
ManufacturerPower Integrations
Manufacturer: Power Integrations
Product Category: AC/DC Converters
RoHS:  Details
Mounting Style: Through Hole
Package/Case: TO-220
Output Voltage: 12 V
Input / Supply Voltage - Min: 85 VAC
Input / Supply Voltage - Max: 265 VAC
Switching Frequency: 132 kHz
Duty Cycle - Max: 83 %
Operating Supply Current: 1.6 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Series: TOP244
Packaging: Tube
Brand: Power Integrations
Product Type: AC/DC Converters
Factory Pack Quantity: 50
Subcategory: PMIC - Power Management ICs
Tradename: TopSwitch
Type: Off Line Converter
Unit Weight: 2.300 g

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  • FQA11N90C N-Channel Power MOSFETs
  • FQA11N90C N-Channel Power MOSFETs
  • FQA11N90C N-Channel Power MOSFETs
FQA11N90C N-Channel Power MOSFETs

FQA11N90C N-Channel Power MOSFETs

Rs 100  / PieceGet Best Price
Channel TypeP Channel
Part NumberFQA11N90C
Maximum Gate Source Voltage30A
Transistor TypeNPN
Mounting TypeSMD
Country of OriginMade in India
Manufacturer: onsemi
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 900 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 1.4 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 80 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Tradename: QFET
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 85 ns
Height: 20.1 mm
Length: 16.2 mm
Product Type: MOSFET
Rise Time: 130 ns
Series: FQA11N90C_F109
Factory Pack Quantity: 450
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 130 ns
Typical Turn-On Delay Time: 60 ns
Width: 5 mm
Part # Aliases: FQA11N90C_F109
Unit Weight: 4.600 g

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  • 7N60 N-Channel Mosfet Transistor
  • 7N60 N-Channel Mosfet Transistor
  • 7N60 N-Channel Mosfet Transistor
7N60 N-Channel Mosfet Transistor

7N60 N-Channel Mosfet Transistor

Rs 9  / PieceGet Best Price
Channel TypeP Channel
Part Number7N60
Transistor TypeNPN
Mounting TypeSMD
Current30 A
Country of OriginMade in India
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology.

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  • FDA59N30 High Voltage MOSFET
  • FDA59N30 High Voltage MOSFET
  • FDA59N30 High Voltage MOSFET
FDA59N30 High Voltage MOSFET

FDA59N30 High Voltage MOSFET

Rs 155  / PieceGet Best Price
Channel TypeP Channel
Part NumberFDA59N30
Maximum Gate Source Voltage+-30V
Transistor TypeNPN
Current35A
Country of OriginMade in India
Product AttributeAttribute ValueSearch Similar
Manufacturer: onsemi
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Id - Continuous Drain Current: 59 A
Rds On - Drain-Source Resistance: 56 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 100 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 W
Channel Mode: Enhancement
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 200 ns
Height: 20.1 mm
Length: 16.2 mm
Product Type: MOSFET
Rise Time: 575 ns
Series: FDA59N30
Factory Pack Quantity: 450
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 120 ns
Typical Turn-On Delay Time: 140 ns
Width: 5 mm
Part # Aliases: FDA59N30_NL
Unit Weight: 4.600 g

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  • SSM3J328R Toshiba Semiconductor
  • SSM3J328R Toshiba Semiconductor
  • SSM3J328R Toshiba Semiconductor
SSM3J328R Toshiba Semiconductor

SSM3J328R Toshiba Semiconductor

Rs 15  / PieceGet Best Price
BrandToshiba
Mounting TypeSMD
Product CategoryMOSFET
PackageSOT-23F-3
Transistor Type1 P-Channel
Product AttributeAttribute ValueSearch Similar
Manufacturer: Toshiba
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOT-23F-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 6 A
Rds On - Drain-Source Resistance: 88.4 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 12.8 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1 W
Channel Mode: Enhancement
Tradename: U-MOSVI
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Toshiba
Configuration: Single
Forward Transconductance - Min: 4.5 S
Height: 0.9 mm
Length: 2.9 mm
Product Type: MOSFET
Series: SSM3J328
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 107 ns
Typical Turn-On Delay Time: 32 ns
Width: 1.3 mm
Unit Weight: 11 mg

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  • TEA1062 MOSFET Transistor
  • TEA1062 MOSFET Transistor
  • TEA1062 MOSFET Transistor
TEA1062 MOSFET Transistor

TEA1062 MOSFET Transistor

Rs 25  / PieceGet Best Price
Channel TypeN Channel
Transistor TypeNPN
Current8mA
Voltage5 V
Product TypeMOSFET
SeriesTEA1062
Country of OriginMade in India
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  • IRF3710 MOSFET Transistor
  • IRF3710 MOSFET Transistor
  • IRF3710 MOSFET Transistor
IRF3710 MOSFET Transistor

IRF3710 MOSFET Transistor

Rs 32  / PieceGet Best Price
BrandInfineon
Mounting StyleThrough Hole
PackageTO-220-3
Transistor PolarityN-Channel
ConfigurationSingle
Product TypeMOSFET
Product AttributeAttribute ValueSearch Similar
Manufacturer: Infineon
Product Category: MOSFET
RoHS:   Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 57 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 86.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon / IR
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Factory Pack Quantity: 50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRF3710PBF SP001551058
Unit Weight: 2 g

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  • 2SD882 Bipolar Transistors
  • 2SD882 Bipolar Transistors
  • 2SD882 Bipolar Transistors
2SD882 Bipolar Transistors

2SD882 Bipolar Transistors

Rs 59  / PieceGet Best Price
BrandSTMicroelectronics
Mounting StyleSMD/SMT
PackageSOT-32-3
Transistor PolarityNPN
Product CategoryBipolar Transistors - BJT
Product AttributeAttribute ValueSearch Similar
Manufacturer: STMicroelectronics
Product Category: Bipolar Transistors - BJT
RoHS:   Details
Mounting Style: SMD/SMT
Package/Case: SOT-32-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 30 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 3 A
Pd - Power Dissipation: 12500 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: 2SD882
Packaging: Tube
Brand: STMicroelectronics
Height: 10.8 mm
Length: 7.8 mm
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: Si
Width: 2.7 mm
Unit Weight: 60 mg

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  • SUP70N06 N-Channel MOSFET.
  • SUP70N06 N-Channel MOSFET.
  • SUP70N06 N-Channel MOSFET.
SUP70N06 N-Channel MOSFET.

SUP70N06 N-Channel MOSFET.

Rs 50  / PieceGet Best Price
Channel TypeP Channel
Part NumberSUP70N06
Maximum Gate Source Voltage30 A
Transistor TypeNPN
Mounting TypeSMD
Country of OriginMade in India
Product AttributeAttribute ValueSearch Similar
Manufacturer: Vishay
Product Category: MOSFET
RoHS: N
Technology: Si
Tradename: TrenchFET
Packaging: Tube
Brand: Vishay / Siliconix
Product Type: MOSFET
Series: SUP
Factory Pack Quantity: 50
Subcategory: MOSFETs
Unit Weight: 2.240 g

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IRF3710 MOSFET Transistor

IRF3710 MOSFET Transistor

Rs 32  / PieceGet Best Price
Channel TypeN Channel
BrandInfineon
Transistor TypeNPN
Mounting TypeThrough Hole
Product CategoryMOSFET
Weight2 g
PackageTO-220-3
Product AttributeAttribute ValueSearch Similar
Manufacturer: Infineon
Product Category: MOSFET
RoHS:   Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 57 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 86.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon / IR
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Factory Pack Quantity: 50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRF3710PBF SP001551058
Unit Weight: 2 g

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  • TAJA105K016R Tantalum Capacitor
  • TAJA105K016R Tantalum Capacitor
  • TAJA105K016R Tantalum Capacitor
TAJA105K016R Tantalum Capacitor

TAJA105K016R Tantalum Capacitor

Rs 250  / PieceGet Best Price
Capacitance0.1 uF - 1.0 uF
Voltage6.3 V
MaterialAluminium
Usage/ApplicationHT
Warranty1 Year
Country of OriginMade in India
Product AttributeAttribute ValueSearch Similar
Manufacturer: AVX
Product Category: Tantalum Capacitors - Solid SMD
RoHS:  Details
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Series: TAJ
Capacitance: 1 uF
Voltage Rating DC: 16 VDC
Tolerance: 10 %
Case Code - in: 1206
Case Code - mm: 3216
Mfr Case Code: A Case
Height: 1.6 mm
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 125 C
Termination Style: SMD/SMT
Brand: AVX
Capacitance - nF: 1000 nF
Length: 3.2 mm
Package/Case: 1206 (3216 metric)
Product: Tantalum Solid Standard Grade - Other Various
Product Type: Tantalum Capacitors
Factory Pack Quantity: 2000
Subcategory: Capacitors
Type: General Purpose SMT Chip Tantalum Capacitors
Width: 1.6 mm
Unit Weight: 27 mg

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  • DQ2817A-250 Electrically EPROM
  • DQ2817A-250 Electrically EPROM
  • DQ2817A-250 Electrically EPROM
DQ2817A-250 Electrically EPROM

DQ2817A-250 Electrically EPROM

Rs 200  / PieceGet Best Price
Memory Size2 Kbit
Number Of Pins14 Pins
BrandSEEQ
Product CategoryIC Chips
ColorBlack
SeriesDQ2817A
AttributeAttribute Value
Manufacturer: SEEQ
Product Category: IC Chips

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  • 1N4148 Switching Diodes
  • 1N4148 Switching Diodes
  • 1N4148 Switching Diodes
1N4148 Switching Diodes

1N4148 Switching Diodes

Rs 0.75  / PieceGet Best Price
Series1N4148
Manufactureronsemi
ProductDiodes
MountingThrough Hole
PackageDO-35
Product AttributeAttribute ValueSearch Similar
Manufacturer: onsemi
Product Category: Diodes - General Purpose, Power, Switching
RoHS:  Details
Mounting Style: Through Hole
Package/Case: DO-35
Peak Reverse Voltage: 100 V
Max Surge Current: 4 A
If - Forward Current: 0.3 A
Configuration: Single
Recovery Time: 4 ns
Vf - Forward Voltage: 1 V
Ir - Reverse Current: 5 uA
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 175 C
Series: 1N4148
Packaging: Bulk
Brand: onsemi / Fairchild
Height: 1.91 mm
Length: 4.56 mm
Product Type: Diodes - General Purpose, Power, Switching
Factory Pack Quantity: 5000
Subcategory: Diodes & Rectifiers
Type: Small Signal Switching Diode
Vr - Reverse Voltage: 100 V
Width: 1.91 mm
Part # Aliases: 1N4148_NL
Unit Weight: 125 mg

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  • 6N137 High Speed Optocouplers
  • 6N137 High Speed Optocouplers
  • 6N137 High Speed Optocouplers
6N137 High Speed Optocouplers

6N137 High Speed Optocouplers

Rs 129  / PieceGet Best Price
Number Of Channels1 channel
BrandVishay
Product CategoryHigh Speed Optocouplers
Data Rate10 Mb/s
Weight650.407 mg
Product AttributeAttribute ValueSearch Similar
Manufacturer: Vishay
Product Category: High Speed Optocouplers
RoHS:  Details
Data Rate: 10 Mb/s
Number of Channels: 1 Channel
Output Type: Photo IC
Isolation Voltage: 5000 Vrms
Vf - Forward Voltage: 1.35 V
If - Forward Current: 10 mA
Vr - Reverse Voltage: 5 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Vishay Semiconductors
Maximum Collector Current: 50 mA
Output Current: 50 mA
Product Type: High Speed Optocouplers
Factory Pack Quantity: 1000
Subcategory: Optocouplers
Unit Weight: 650.407 mg

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